ECET 220 Week 3 Homework

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# 2 (e book, Qn.# 2, pg.# 416 & Hard Cover Ed., Qn.# 2, pg.# 418) Using the characteristics of Fig. 11, determine ID for the following levels of VGS(with VDS > VP): # 6 (e Book, pg.# 416-417) Hard Cover Ed. Prob.# 7, pg.# 419 a. Describe in your own words why IG is effectively 0 A for a JFET transistor. b. Why is the input impedance to a JFET so high? c. Why is the terminology field effect appropriate for this important three-terminal device? # 16 (e book, pg.# 418) Hard Cover Ed., Qn.# 18, pg.# 420 Define the region of operation for the 2N5457 JFET of Fig. 22 using the range of IDSS and VP provided. That is, sketch the transfer curve defined by the maximum IDSS and VP and the transfer curve for the minimum IDSS and VP. Then, shade in the resulting area between the two curves. # 17 (E book, Qn.# 17, pg.# 418) & hard cover Ed., Qn.# 20, pg.# 428. The numbers given are different and they are 30 V & 100 mW Chapter 7 # 1 Fixed-Bias Configuration For the fixed-bias configuration of Fig. 80: Sketch the transfer characteristics of the device. Superimpose the network equation on the same graph. Determine and IDQ and VDSQ Using Shockley’s equation, solve for and then find IDQ and VDSQ. Compare with the solutions of part (c). # 2 (e book, Pg.# 476) # 6 (e book, pg.# 477) Hard cover Ed., Prob.# 7, pg.# 474 For the self-bias configuration of Fig. 85: Sketch the transfer curve for the device. Superimpose the network equation on the same graph. Determine and ID Q & VGS Q Calculate VDS, VD, VG, and VS. # 11 Chapter 8 # 3 For a JFET having device parameters gm0 = 5 mS and VP = −3.5 V, what is the device current at VGS = 0 V? (Ebook, Pg.# 541) # 12 Using the drain characteristic of Fig. 72: a. What is the value of rd for VGS = 0 V? b. What is the value of gm0 at VDS = 10 V? # 17 Determine Zi, Zo, and AV for the network of Fig. 73 if IDSS = 10 mA, VP = −4 V, and rd = 40 kΩ. # 23. Determine Zi, Zo, and Vo for the network of Fig. 76 if V = 20 mV.

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# 2 (e book, Qn.# 2, pg.# 416 & Hard Cover Ed., Qn.# 2, pg.# 418) Using the characteristics of Fig. 11, determine ID for the following levels of VGS(with VDS > VP): # 6 (e Book, pg.# 416-417) Hard Cover Ed. Prob.# 7, pg.# 419 a. Describe in your own words why IG is effectively 0 A for a JFET transistor. b. Why is the input impedance to a JFET so high? c. Why is the terminology field effect appropriate for this important three-terminal device? # 16 (e book, pg.# 418) Hard Cover Ed., Qn.# 18, pg.# 420 Define the region of operation for the 2N5457 JFET of Fig. 22 using the range of IDSS and VP provided. That is, sketch the transfer curve defined by the maximum IDSS and VP and the transfer curve for the minimum IDSS and VP. Then, shade in the resulting area between the two curves. # 17 (E book, Qn.# 17, pg.# 418) & hard cover Ed., Qn.# 20, pg.# 428. The numbers given are different and they are 30 V & 100 mW Chapter 7 # 1 Fixed-Bias Configuration For the fixed-bias configuration of Fig. 80: Sketch the transfer characteristics of the device. Superimpose the network equation on the same graph. Determine and IDQ and VDSQ Using Shockley’s equation, solve for and then find IDQ and VDSQ. Compare with the solutions of part (c). # 2 (e book, Pg.# 476) # 6 (e book, pg.# 477) Hard cover Ed., Prob.# 7, pg.# 474 For the self-bias configuration of Fig. 85: Sketch the transfer curve for the device. Superimpose the network equation on the same graph. Determine and ID Q & VGS Q Calculate VDS, VD, VG, and VS. # 11 Chapter 8 # 3 For a JFET having device parameters gm0 = 5 mS and VP = −3.5 V, what is the device current at VGS = 0 V? (Ebook, Pg.# 541) # 12 Using the drain characteristic of Fig. 72: a. What is the value of rd for VGS = 0 V? b. What is the value of gm0 at VDS = 10 V? # 17 Determine Zi, Zo, and AV for the network of Fig. 73 if IDSS = 10 mA, VP = −4 V, and rd = 40 kΩ. # 23. Determine Zi, Zo, and Vo for the network of Fig. 76 if V = 20 mV.

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