ECET 220 Week 3 Lab Bipolar Junction Transistor Amplifier Circuit Analysis

Objectives: Given the schematic diagram of a Voltage-Divider based Common Emitter (CE) Amplifier: Use amplifier parameters to evaluate the bipolar junction transistor (BJT) Common Emitter (CE) amplifier characteristics Verify the bipolar junction transistor (BJT) voltage divider biased DC parameters through schematic theoretical analysis, simulated circuit analysis and constructed circuit analysis Determine the phase angle between the input and output signal of the bipolar junction transistor (BJT) Common Emitter (CE) amplifier Results: The theoretical, simulated and constructed circuit characteristics that were calculated or measured were within an acceptable range of ± 10%. For the simulated and constructed circuit AC analysis waveforms, the input and output waveform signals were out of phase by 180° with an average gain of approximately 4. The Q-points of the theoretical, simulated and constructed circuit varied because of the change in the value for IC. Conclusions: The BJT common-emitter amplifier is correctly called an invertingamplifier as the input and output voltage waveforms are 180° out of phase and are inverted. As theorized, this transistor configuration has a high voltage and current gain, as demonstrated by the measured characteristics.