INTRODUCTION TO
MICROELECTRONIC
FABRICATION SECOND
EDITION
by
RICHARD C. JAEGER
First Printing Errata - Updated 07/30/03
Page number: Correction
42: Problem 2.5 180-nm should be 120-nm.
65: Problems 3.11 and 3.12: Assume a temperature of 1100 oC.
104: Problem 4.4(b) should refer to Fig. 4.12 .
106: Problem 4.10(e) should refer to part (d) .
106: Figure P4.10: The spacings between resistor legs should all be 3
107: Problem 4.14: Assume NB = 1016/cm3 .
107: Problem 4.15: Assume a 0.3 -cm p-type substrate.
107: Problem 4.21(c): the temperature should be 950 oC; Problem 4.21(d) should refer to Fig.
4.12.
128: Problem 5.18: "minimum substrate temperature" should be " maximum substrate
temperature"
150: Problem 6.5: 1000 molecules/cm3 ; Problem 6.14: A1 should be Al
169: The gray shading in Fig. 7.18 is almost invisible. Here is a corrected drawing: Download
Fig. 7.18
171: The figure captions for Fig. 7.20 are reversed.
176: Problem 7.12(c): ... if a 1-m thick "low-K"...
199: Problem 8.4: Compare the five yield ...; Problem 8.5 should refer to Fig. 8.16 not Fig. 8.11.
200: Problem 8.12. Assume a die cost of $1.00 to find the die sizes.
200: Problems 8.13 and 8.15: References to Fig. 8.11 should be to Fig. 8.16.
212: Paragraoh above Section 9.2: "scale factor = square root of 2"
265: Problem 10.2: NE/DE = should be GE = ...; Problem 10.3: What epitaxial layer doping may
267: Problem 10.13: Reference should be to Table 10.1 not Table 10.2.
268: Problem 10.22: "What is a lower bound ..."; Problem 10.27: 1 m should be 1 m.
270: Table 11.1: Density should be in g/cm3 .
273: Third line: 22o should be 35o.
Answer Corrections
1.5
34.4 x 109 transistors
1.13 1 M, 16 M, 100 M
3.7
3.1 hours, 74 hours
4.3
5.21 hrs
4.15 14.5, 34.9, 203, 2840, 9.72, 12.5
5.1
3.5 x 1018/cm3, 7.5 x 1013/cm2 , 0.47 m
5.3
900 keV, 0.13 m
5.5
1.0 x 1015/cm2, 10.5 hrs
5.7
60.7 sec
5.11 2.69 x 104 m/sec should be 8.85 x104 m/sec
5.13 53 nm, 870 nm
6.1