Electronics

Published on January 2017 | Categories: Documents | Downloads: 35 | Comments: 0 | Views: 398
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Transistor

BJT

FET

JFET

IGFET

MOSFET

MESFET

Current control device + from the notes.

Voltage control device

Voltage controlled resistance region. Ohmic Region Saturation Region

Voltage controlled resistance region. Ohmic Region

Heavily doped n-type region. Drain

n+
Light doped n-type region. Ground Tungsten

n

P

GaAs Substrate

n+
Source Figure: Depletion Type MESFET

Heavily doped n-type region. Drain Light doped n-type region.

n+

Ground Tungsten

n+
Source Figure: Enhancement Type MESFET

N type substrate

P

P

Transistors Characteristics: I(DSS), V(P)

V(GS)on, I(D)on, V(th) Trans-conductance

Output to Input relationship

Opposite of Resistance

Large Slope

Small Slope

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